stth6003tv/cw october 1999 - ed: 5c high frequency secondary rectifier ? dual rectifiers suited for switch mode power supply and high frequency dc to dc converters. packaged either in isotop or in to-247, this device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipments and telecom power supplies. description combines highest recovery and voltage performance ultra-fast, soft and noise-free recovery insulated package: isotop insulation voltage: 2500 v rms capacitance: < 45 pf low inductance and low capaci- tance allow simplified layout features and benefits symbol parameter value unit v rrm repetitive peak reverse voltage 300 v i f(rms) rms forward current isotop 100 a i f(rms) rms forward current to-247 60 a i f(av) average forward current isotop tc = 95 c d = 0.5 per diode per device 30 60 a to-247 tc =135 c d = 0.5 per diode per device 30 60 a i fsm surge non repetitive forward current. isotop tp = 10 ms sinusoidal 400 a to-247 tp = 10 ms sinusoidal 300 a i rsm non repetitive peak reverse current tp =100 m s square 4a t stg storage temperature range isotop - 55 to + 150 c to-247 - 65 to + 175 c tj maximum operating junction temperature isotop 150 c to-247 175 c absolute ratings (limiting values, per diode) i f(av) 2 x 30 a v rrm 300 v v f (max) 1 v trr (max) 55 ns major product characteristics a1 k1 k2 a2 a1 a2 k1 k2 isotop ? stth6003tv isotop is a registered trademark of stmicroelectronics a1 k a2 a1 a2 k to-247 stth6003cw 1/6
symbol parameter tests conditions min. typ. max. unit i r * reverse leakage current v r =300v tj=25 c 60 m a tj = 125 c 60 600 v f ** forward voltage drop i f = 30a tj=25 c 1.25 v tj = 125 c 0.85 1 pulse test : * tp = 5 ms, d <2% ** tp = 380 m s, d <2% to evaluate the maximum conduction losses use the following equation: p = 0.75 x i f(av) + 0.008 x i f 2 (rms) static electrical characteristics (per diode) symbol parameter value unit r th (j-c) junction to case isotop per diode total 1.4 0.75 c/w to-247 per diode total 1 0.55 r th (c) coupling 0.1 when the diodes 1 and 2 are used simultaneously: d tj (diode 1) = p (diode 1) x r th(j-c) (per diode) + p (diode 2) x r th(c) thermal resistances symbol tests conditions min. typ. max. unit trr i f = 0.5 a irr = 0.25 a i r =1a tj=25 c 40 ns i f =1a di f /dt = - 50 a/ m sv r =30v 55 tfr i f =30a di f /dt = 200 a/ m stj=25 c 350 ns v fp v fr = 1.1 x v f max. 5v s factor vcc = 200 v i f = 30 a tj = 125 c 0.3 - i rm di f /dt = 200 a/ m s 11 a recovery characteristics stth6003tv/cw 2/6
0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 if(av) (a) p1(w) t d =tp/t tp d =1 d = 0.5 d = 0.2 d = 0.1 d = 0.05 fig. 1: conduction losses versus average current (per diode). 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 1 10 100 vfm(v) ifm(a) tj=125 c typical values tj=25 c maximum values tj=125 c maximum values fig. 2: forward voltage drop versus forward current (maximum values , per diode) . 0 50 100 150 200 250 300 350 400 450 500 0 20 40 60 80 100 120 140 160 180 trr(ns) vr=200v tj=125 c if=2*if(av) if=if(av) if=0.5*if(av) dif/dt(a/ m s) fig. 5: reverse recovery time versus di f /dt (90% confidence, per diode). 0 50 100 150 200 250 300 350 400 450 500 0 2 4 6 8 10 12 14 16 18 20 22 dif/dt(a/ m s) irm(a) vr=200v tj=125 c if=2*if(a v) if=if(av) if=0.5*if(av) fig. 4: peak reverse recovery current versus di f /dt (90% confidence,per diode). 1e-3 1e-2 1e-1 1e+0 1e+1 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) zth(j-c)/rth(j-c) t d =tp/t tp single pulse d = 0.5 d = 0.2 d = 0.1 fig. 3a: relative variation of thermal impedance junction to case versus pulse duration (isotop) . 1e-4 1e-3 1e-2 1e-1 1e+0 0.0 0.2 0.4 0.6 0.8 1.0 zth(j-c)/rth(j-c) t d =tp/t tp tp(s) single pulse d = 0.5 d = 0.2 d = 0.1 fig. 3b: relative variation of thermal impedance junction to case versus pulse duration (to-247) . stth6003tv/cw 3/6
25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 tj( c) irm s factor fig. 7: relative variation of dynamic parameters versus junction temperature (reference: tj = 125 c). 0 50 100 150 200 250 300 350 400 450 500 0 2 4 6 8 10 vfp(v) if=if(av) tj=125 c dif/dt(a/ m s) fig. 8: transient peak forward voltage versus di f /dt (90% confidence,per diode). 0 50 100 150 200 250 300 350 400 450 500 0 100 200 300 400 500 tfr(ns) if=if(av) vfr=1.1*vfmax tj=125 c dif/dt(a/ m s) fig. 9: forward recovery time versus di f /dt (90% confidence, per diode). 0 50 100 150 200 250 300 350 400 450 500 0.0 0.1 0.2 0.3 0.4 0.5 0.6 s factor vr=200v tj=125 c dif/dt(a/ m s) fig. 6: softness factor (tb/ta) versus di f /dt (typical values, per diode). stth6003tv/cw 4/6
package mechanical data isotop ref. dimensions millimeters inches min. max. min. max. a 11.80 12.20 0.465 0.480 a1 8.90 9.10 0.350 0.358 b 7.8 8.20 0.307 0.323 c 0.75 0.85 0.030 0.033 c2 1.95 2.05 0.077 0.081 d 37.80 38.20 1.488 1.504 d1 31.50 31.70 1.240 1.248 e 25.15 25.50 0.990 1.004 e1 23.85 24.15 0.939 0.951 e2 24.80 typ. 0.976 typ. g 14.90 15.10 0.587 0.594 g1 12.60 12.80 0.496 0.504 g2 3.50 4.30 0.138 0.169 f 4.10 4.30 0.161 0.169 f1 4.60 5.00 0.181 0.197 p 4.00 4.30 0.157 0.69 p1 4.00 4.40 0.157 0.173 s 30.10 30.30 1.185 1.193 stth6003tv/cw 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1999 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com package mechanical data to-247 f2 f1 v2 l4 l2 l1 l3 d l l5 me h v v a dia. f3 f4 g == f(x3) ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.85 5.15 0.191 0.203 d 2.20 2.60 0.086 0.102 e 0.40 0.80 0.015 0.031 f 1.00 1.40 0.039 0.055 f1 3.00 0.118 f2 2.00 0.078 f3 2.00 2.40 0.078 0.094 f4 3.00 3.40 0.118 0.133 g 10.90 0.429 h 15.45 15.75 0.608 0.620 l 19.85 20.15 0.781 0.793 l1 3.70 4.30 0.145 0.169 l2 18.50 0.728 l3 14.20 14.80 0.559 0.582 l4 34.60 1.362 l5 5.50 0.216 m 2.00 3.00 0.078 0.118 v5 5 v2 60 60 dia. 3.55 3.65 0.139 0.143 ordering code marking package weight base qty delivery mode STTH6006TV1 STTH6006TV isotop 27g without screws 10 with screws tube stth6006cw stth6006cw to-247 4.36g 30 tube cooling method: by conduction(c) recommended torque value (isotop): 1.3 n.m. recommended torque value (to-247 : 0.8 n.m. maximum torque value (isotop): 1.5 n.m. maximum torque value (to-247): 1.0 n.m. epoxy meets ul 94,v0 stth6003tv/cw 6/6
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